Title

An Improved Model For Four-Terminal Junction Field-Effect Transistors

Authors

Authors

J. J. Liou;Y. Yue

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Engineering, Electrical & Electronic; Physics, Applied

Abstract

The junction field-effect transistor (JFET) has isolated top- and bottom-gate terminals and therefore is useful for signal mixing applications. Existing models for the four-terminal JFET often have the same form as the three-terminal JFET model, however, in which only a single pinch-off voltage is used to describe the current-voltage characteristics. In this paper, a more general four-terminal JFET model is developed. Two different pinch-off voltages are involved in the improved model to account more comprehensively for the effects of both depletion regions associated with the top- and bottom-gate junctions. Results simulated from a device simulator are also included in support of the model.

Journal Title

Ieee Transactions on Electron Devices

Volume

43

Issue/Number

8

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

1309

Last Page

1311

WOS Identifier

WOS:A1996UZ97600023

ISSN

0018-9383

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