Title
An Improved Model For Four-Terminal Junction Field-Effect Transistors
Abbreviated Journal Title
IEEE Trans. Electron Devices
Keywords
Engineering, Electrical & Electronic; Physics, Applied
Abstract
The junction field-effect transistor (JFET) has isolated top- and bottom-gate terminals and therefore is useful for signal mixing applications. Existing models for the four-terminal JFET often have the same form as the three-terminal JFET model, however, in which only a single pinch-off voltage is used to describe the current-voltage characteristics. In this paper, a more general four-terminal JFET model is developed. Two different pinch-off voltages are involved in the improved model to account more comprehensively for the effects of both depletion regions associated with the top- and bottom-gate junctions. Results simulated from a device simulator are also included in support of the model.
Journal Title
Ieee Transactions on Electron Devices
Volume
43
Issue/Number
8
Publication Date
1-1-1996
Document Type
Article
DOI Link
Language
English
First Page
1309
Last Page
1311
WOS Identifier
ISSN
0018-9383
Recommended Citation
"An Improved Model For Four-Terminal Junction Field-Effect Transistors" (1996). Faculty Bibliography 1990s. 1675.
https://stars.library.ucf.edu/facultybib1990/1675
Comments
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