Title

Determination Of Physical Mechanisms Contributing To The Difference Between Drain And Source Resistances In Short-Channel Mosfets

Authors

Authors

A. OrtizConde; J. J. Liou; R. Narayanan;F. J. G. Sanchez

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Knowledge of the difference between the drain and source resistances (R(d) - R(s)) of MOSFETs provides useful information on how the performance of MOSFETs will vary if the drain and source regions are interchanged. Device simulations are carried out to study the physical mechanisms underlying (R(d) - R(s)) in MOSFETs. The present results show that (R(d) - R(s)) is mainly due to the difference in the drain and source contact resistances, not to the difference in the source and drain doping densities, nor to misalignment of the gate with respect to the source and drain regions.

Journal Title

Solid-State Electronics

Volume

39

Issue/Number

2

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

211

Last Page

215

WOS Identifier

WOS:A1996TR43000005

ISSN

0038-1101

Share

COinS