Determination Of Physical Mechanisms Contributing To The Difference Between Drain And Source Resistances In Short-Channel Mosfets

    Authors

    A. OrtizConde; J. J. Liou; R. Narayanan;F. J. G. Sanchez

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Knowledge of the difference between the drain and source resistances (R(d) - R(s)) of MOSFETs provides useful information on how the performance of MOSFETs will vary if the drain and source regions are interchanged. Device simulations are carried out to study the physical mechanisms underlying (R(d) - R(s)) in MOSFETs. The present results show that (R(d) - R(s)) is mainly due to the difference in the drain and source contact resistances, not to the difference in the source and drain doping densities, nor to misalignment of the gate with respect to the source and drain regions.

    Journal Title

    Solid-State Electronics

    Volume

    39

    Issue/Number

    2

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    211

    Last Page

    215

    WOS Identifier

    WOS:A1996TR43000005

    ISSN

    0038-1101

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