Title

Parasitic Series Resistance-Independent Method For Device-Model Parameter Extraction

Authors

Authors

F. J. G. Sanchez; A. OrtizConde;J. J. Liou

Comments

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Abbreviated Journal Title

IEE Proc.-Circuit Device Syst.

Keywords

model parameter extraction; semiconductor diodes; I-V characteristics; parasitic resistance; p-n diodes; SCHOTTKY DIODES; IDEALITY FACTOR; PLOT; Engineering, Electrical & Electronic

Abstract

A new method is presented that permits the extraction of a semiconductor device's intrinsic model parameters from its experimental extrinsic forward I-V characteristics, independently of the parasitic resistance that might be present in series within the real device. The extraction is performed from an auxiliary function which contains the integral experimentally measured data. Integrating data also serves as a smoothing procedure. The diode quality factor, reverse current and series resistance parameters of a single exponential diode model are extracted from a real p-n junction diode in order to illustrate the method.

Journal Title

Iee Proceedings-Circuits Devices and Systems

Volume

143

Issue/Number

1

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

68

Last Page

70

WOS Identifier

WOS:A1996TX12200011

ISSN

1350-2409

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