Parasitic Series Resistance-Independent Method For Device-Model Parameter Extraction

    Authors

    F. J. G. Sanchez; A. OrtizConde;J. J. Liou

    Comments

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    Abbreviated Journal Title

    IEE Proc.-Circuit Device Syst.

    Keywords

    model parameter extraction; semiconductor diodes; I-V characteristics; parasitic resistance; p-n diodes; SCHOTTKY DIODES; IDEALITY FACTOR; PLOT; Engineering, Electrical & Electronic

    Abstract

    A new method is presented that permits the extraction of a semiconductor device's intrinsic model parameters from its experimental extrinsic forward I-V characteristics, independently of the parasitic resistance that might be present in series within the real device. The extraction is performed from an auxiliary function which contains the integral experimentally measured data. Integrating data also serves as a smoothing procedure. The diode quality factor, reverse current and series resistance parameters of a single exponential diode model are extracted from a real p-n junction diode in order to illustrate the method.

    Journal Title

    Iee Proceedings-Circuits Devices and Systems

    Volume

    143

    Issue/Number

    1

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    68

    Last Page

    70

    WOS Identifier

    WOS:A1996TX12200011

    ISSN

    1350-2409

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