Study of AlGaAs/InGaAs pseudomorphic HEMT using a two-dimensional device simulator

    Authors

    J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Keywords

    Monte-Carlo; Transport; Modfets; Gaas; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The use of the two-dimensional device simulator MEDICI in conjunction with a heterojunction application module to examine the current-voltage, transconductance, and cutoff frequency of an AlGaAs/InGaAs pseudomorphic HEMT is presented. The physical characteristics such as energy band diagram and potential and current contours are given and explained. The HEMT operated in the region of avalanche breakdown is also evaluated.

    Journal Title

    Physica Status Solidi a-Applied Research

    Volume

    153

    Issue/Number

    2

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    559

    Last Page

    566

    WOS Identifier

    WOS:A1996UA55900031

    ISSN

    0031-8965

    Share

    COinS