Title
Transient analysis of bipolar transistors including built-in field and recombination in quasi-neutral base
Abstract
Transient analysis of bipolar transistors including built-in field and recombination in the base is derived. For the bipolar transistor switching from the saturation to cutoff, minority carriers in the neutral base are mainly removed through the collector terminal, especially for the BJT with large base grading. The charge partitioning between the emitter and collector is a strong function of the strength of aiding field and boundary conditions for switching.
Journal Title
Physica Status Solidi a-Applied Research
Volume
153
Issue/Number
1
Publication Date
1-1-1996
Document Type
Article
Language
English
First Page
287
Last Page
297
WOS Identifier
ISSN
0031-8965
Recommended Citation
"Transient analysis of bipolar transistors including built-in field and recombination in quasi-neutral base" (1996). Faculty Bibliography 1990s. 1807.
https://stars.library.ucf.edu/facultybib1990/1807
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu