Transient analysis of bipolar transistors including built-in field and recombination in quasi-neutral base

    Authors

    J. S. Yuan;Y. Gu

    Comments

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    Abstract

    Transient analysis of bipolar transistors including built-in field and recombination in the base is derived. For the bipolar transistor switching from the saturation to cutoff, minority carriers in the neutral base are mainly removed through the collector terminal, especially for the BJT with large base grading. The charge partitioning between the emitter and collector is a strong function of the strength of aiding field and boundary conditions for switching.

    Journal Title

    Physica Status Solidi a-Applied Research

    Volume

    153

    Issue/Number

    1

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    287

    Last Page

    297

    WOS Identifier

    WOS:A1996TV20200029

    ISSN

    0031-8965

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