An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions

    Authors

    Y. Yue; J. J. Liou;I. Batarseh

    Comments

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    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the steady-state and transient characteristics of such a device. The model is derived rigorously from the ambipolar transport equaion and is valid for all free-carrier injection conditions, rather than just for a special case (i.e. low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional simulator called MEDICI are also included in support of the model. Copyright (C) 1996 Elsevier Science Ltd

    Journal Title

    Solid-State Electronics

    Volume

    39

    Issue/Number

    9

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    1277

    Last Page

    1282

    WOS Identifier

    WOS:A1996VE35400003

    ISSN

    0038-1101

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