A comprehensive study of high-level free-carrier injection in bipolar junction transistors

    Authors

    Y. Yue; J. J. Liou; A. OrtizConde;F. G. Sanchez

    Comments

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    Abbreviated Journal Title

    Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.

    Keywords

    semiconductor device modeling; bipolar junction transistors; high-level; injection; TIME MODEL; REGIONS; Physics, Applied

    Abstract

    This paper presents a comprehensive study on the effects of high-level free-carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the QNB. It is shown that high-level injection can create a large retarding field which is in the opposite direction of the built-in field associated with the nonuniform doping concentration. High-level injection also enhances recombination in the QNB, thus resulting in a position-dependent minority-carrier current in the region even if the base is thin. Our results further suggest that the widely used zero majority current approximation gives rise to a larger error compared to other lesser known approximations.

    Journal Title

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers

    Volume

    35

    Issue/Number

    7

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    3845

    Last Page

    3851

    WOS Identifier

    WOS:000074719300005

    ISSN

    0021-4922

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