Title

Gate Oxide Thickness Dependence Of Ldd Mosfet Parameters

Authors

Authors

M. R. Hassan; J. J. Liou;A. OrtizConde

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Journal Title

Solid-State Electronics

Volume

41

Issue/Number

8

Publication Date

1-1-1997

Document Type

Article

Language

English

First Page

1199

Last Page

1201

WOS Identifier

WOS:A1997XM75200021

ISSN

0038-1101

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