Gate Oxide Thickness Dependence Of Ldd Mosfet Parameters

    Authors

    M. R. Hassan; J. J. Liou;A. OrtizConde

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Journal Title

    Solid-State Electronics

    Volume

    41

    Issue/Number

    8

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    1199

    Last Page

    1201

    WOS Identifier

    WOS:A1997XM75200021

    ISSN

    0038-1101

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