Effect Of Varying Sputtering Power Levels On Y-Ba-Cu-O Film Composition

Authors

    Authors

    S. M. Arora; V. H. Desai; K. B. Sundaram; L. Chow;J. Chen

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Keywords

    Thin-Films; Substrate; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    R.F. diode sputtering technique is used to deposit superconducting thin films of Y-Ba-Cu-O on various substrates from a single composite target. Sputtering power levels of 50, 100, and 150 W are used to study the effects of different power levels on the composition and deposition profiles of the films. The as-deposited films show a strong radial variation in composition. A circular ring like pattern with little or no film deposition in the center of the substrate is observed for all three power levels. This is believed to be due to the resputtering effects from negative ion and energetic neutral particle bombardment. Energy dispersive spectrum results indicate that copper is uniformly distributed across the substrate, compared to Ba which is deficient near the center of the substrate. Films deposited on SrTiO3 substrates exhibit regions of fractal growth which was 123 composition

    Journal Title

    Physica Status Solidi a-Applied Research

    Volume

    126

    Issue/Number

    2

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    377

    Last Page

    381

    WOS Identifier

    WOS:A1991GM41600008

    ISSN

    0031-8965

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