A study of the validity of capacitance-based method for extracting the effective channel length of MOSFET's

    Authors

    Z. Latif; A. OrtizConde; J. J. Liou;F. J. G. Sanchez

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    SERIES RESISTANCE; LDD MOSFETS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The capacitance-based method (C-V method) is a straightforward method for extracting the effective channel length of MOSFET's. This paper investigates the validity of such a method based on results simulated from a two-dimensional (2-D) device simulator. Thr effective channel length extracted from the C-V method is also compared with those obtained from other methods reported in the literature.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    44

    Issue/Number

    2

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    340

    Last Page

    343

    WOS Identifier

    WOS:A1997WD59800017

    ISSN

    0018-9383

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