Title

Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors

Authors

Authors

J. H. Ning; J. S. Yuan;J. Song

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

SURFACE RECOMBINATION CURRENT; CIRCUITS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

The analytical equations of heterojunction bipolar transistors with nonuniform doping in the base and emitter was developed. Device characteristics between linearly and uniformly doped HBTs was evaluated. The linearly doped HBT has higher current gain, lower base transit time, higher cutoff frequency, and lower emitter-base junction capacitance than those of the uniformly doped HBT. (C) 1997 Elsevier Science Ltd.

Journal Title

Solid-State Electronics

Volume

41

Issue/Number

9

Publication Date

1-1-1997

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0038-1101(97)00064-6

Language

English

First Page

1263

Last Page

1268

WOS Identifier

WOS:A1997XZ15200008

ISSN

0038-1101

Recommended Citation

"Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors" (1997). Faculty Bibliography 1990s. 2038.
https://stars.library.ucf.edu/facultybib1990/2038