Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors

    Authors

    J. H. Ning; J. S. Yuan;J. Song

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    SURFACE RECOMBINATION CURRENT; CIRCUITS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The analytical equations of heterojunction bipolar transistors with nonuniform doping in the base and emitter was developed. Device characteristics between linearly and uniformly doped HBTs was evaluated. The linearly doped HBT has higher current gain, lower base transit time, higher cutoff frequency, and lower emitter-base junction capacitance than those of the uniformly doped HBT. (C) 1997 Elsevier Science Ltd.

    Journal Title

    Solid-State Electronics

    Volume

    41

    Issue/Number

    9

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    1263

    Last Page

    1268

    WOS Identifier

    WOS:A1997XZ15200008

    ISSN

    0038-1101

    Share

    COinS