Title

A new approach to extract the threshold voltage of MOSFET's

Authors

Authors

A. OrtizConde; E. D. G. Fernandes; J. J. Liou; M. R. Hassan; F. J. GarciaSanchez; G. DeMercato;W. S. Wong

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Engineering, Electrical & Electronic; Physics, Applied

Abstract

A new method is presented to extract the threshold voltage of MOSFET's, It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFET's. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements.

Journal Title

Ieee Transactions on Electron Devices

Volume

44

Issue/Number

9

Publication Date

1-1-1997

Document Type

Article

Language

English

First Page

1523

Last Page

1528

WOS Identifier

WOS:A1997XR10800024

ISSN

0018-9383

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