Title
A new approach to extract the threshold voltage of MOSFET's
Abbreviated Journal Title
IEEE Trans. Electron Devices
Keywords
Engineering, Electrical & Electronic; Physics, Applied
Abstract
A new method is presented to extract the threshold voltage of MOSFET's, It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFET's. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements.
Journal Title
Ieee Transactions on Electron Devices
Volume
44
Issue/Number
9
Publication Date
1-1-1997
Document Type
Article
DOI Link
Language
English
First Page
1523
Last Page
1528
WOS Identifier
ISSN
0018-9383
Recommended Citation
"A new approach to extract the threshold voltage of MOSFET's" (1997). Faculty Bibliography 1990s. 2045.
https://stars.library.ucf.edu/facultybib1990/2045
Comments
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