A new approach to extract the threshold voltage of MOSFET's

    Authors

    A. OrtizConde; E. D. G. Fernandes; J. J. Liou; M. R. Hassan; F. J. GarciaSanchez; G. DeMercato;W. S. Wong

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    A new method is presented to extract the threshold voltage of MOSFET's, It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFET's. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    44

    Issue/Number

    9

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    1523

    Last Page

    1528

    WOS Identifier

    WOS:A1997XR10800024

    ISSN

    0018-9383

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