Modelling the BiCMOS switching delay including radiation effects

    Authors

    A. M. Phanse; J. S. Yuan; C. S. Yeh;B. Gadepally

    Comments

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    Abbreviated Journal Title

    IEE Proc.-Circuit Device Syst.

    Keywords

    BiCMOS circuits; switching response; radiation effects; OXIDE CHARGE; BIPOLAR-TRANSISTORS; INTERFACE; MOBILITY; SPEED; Engineering, Electrical & Electronic

    Abstract

    The effect of ionising radiation on the BiCMOS switching response has been studied. The radiation-induced surface recombination current in the base of the bipolar transistor and the radiation-induced resistive leakage paths in the BiCMOS structure have been modelled as functions of the interface state density and the oxide trapped charge density. Radiation effects on the MOSFET and the bipolar transistor including leakage paths in the BiCMOS structure have been incorporated into the equivalent circuit of the proposed model. A semianalytical solution of the transient response of the BiCMOS gate is obtained including high injection and high current base push-out effects. The proposed model is compared with experimental data and with MEDICI simulations, and the agreement is good over a wide range of radiation levels. The BiNMOS gate has been demonstrated to be more radiation hard as compared to the BiPMOS gate.

    Journal Title

    Iee Proceedings-Circuits Devices and Systems

    Volume

    144

    Issue/Number

    2

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    53

    Last Page

    59

    WOS Identifier

    WOS:A1997WY54600001

    ISSN

    1350-2409

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