Title
On the base profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications .2. Circuit performance issues - Comment
Abbreviated Journal Title
IEEE Trans. Electron Devices
Keywords
Engineering, Electrical & Electronic; Physics, Applied
Abstract
The base transit time of the trapezoidal Ge base profile for the SiGe bipolar transistor has been evaluated, The analytical equations derived in the above paper result in significant error as the trapezoid profile is close to uniform Ge profile, In this work accurate analytical equations are derived, Comparisons between the present analytical predictions and previous results are given.
Journal Title
Ieee Transactions on Electron Devices
Volume
44
Issue/Number
5
Publication Date
1-1-1997
Document Type
Letter
DOI Link
Language
English
First Page
915
Last Page
917
WOS Identifier
ISSN
0018-9383
Recommended Citation
"On the base profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications .2. Circuit performance issues - Comment" (1997). Faculty Bibliography 1990s. 2100.
https://stars.library.ucf.edu/facultybib1990/2100
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu