On the base profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications .2. Circuit performance issues - Comment

    Authors

    J. Song;J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The base transit time of the trapezoidal Ge base profile for the SiGe bipolar transistor has been evaluated, The analytical equations derived in the above paper result in significant error as the trapezoid profile is close to uniform Ge profile, In this work accurate analytical equations are derived, Comparisons between the present analytical predictions and previous results are given.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    44

    Issue/Number

    5

    Publication Date

    1-1-1997

    Document Type

    Letter

    Language

    English

    First Page

    915

    Last Page

    917

    WOS Identifier

    WOS:A1997WV64800037

    ISSN

    0018-9383

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