Title

Optimum Ge profile for base transit time minimization of SiGe HBT

Authors

Authors

J. Song;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

BIPOLAR-TRANSISTORS; 77-K APPLICATIONS; CIRCUIT; OPTIMIZATION; TECHNOLOGY; DESIGN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Optimization of the trapezoidal Ge profile to minimize base transit time of the SiGe bipolar transistor was examined. A closed-form equation to find the optimum point of the trapezoidal Ge profile for base transit time minimization as a function of temperature is derived. Experimental data published in the literature are used to compare the model predictions with measurement.

Journal Title

Solid-State Electronics

Volume

41

Issue/Number

12

Publication Date

1-1-1997

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0038-1101(97)00129-9

Language

English

First Page

1957

Last Page

1959

WOS Identifier

WOS:A1997YL16800021

ISSN

0038-1101

Recommended Citation

"Optimum Ge profile for base transit time minimization of SiGe HBT" (1997). Faculty Bibliography 1990s. 2101.
https://stars.library.ucf.edu/facultybib1990/2101