Optimum Ge profile for base transit time minimization of SiGe HBT

    Authors

    J. Song;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    BIPOLAR-TRANSISTORS; 77-K APPLICATIONS; CIRCUIT; OPTIMIZATION; TECHNOLOGY; DESIGN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Optimization of the trapezoidal Ge profile to minimize base transit time of the SiGe bipolar transistor was examined. A closed-form equation to find the optimum point of the trapezoidal Ge profile for base transit time minimization as a function of temperature is derived. Experimental data published in the literature are used to compare the model predictions with measurement.

    Journal Title

    Solid-State Electronics

    Volume

    41

    Issue/Number

    12

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    1957

    Last Page

    1959

    WOS Identifier

    WOS:A1997YL16800021

    ISSN

    0038-1101

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