Photoluminescence studies of thermal impurity diffused porous silicon layers

    Authors

    K. B. Sundaram; S. A. Ali; R. E. Peale;W. A. McClintic

    Comments

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    Abbreviated Journal Title

    J. Mater. Sci.-Mater. Electron.

    Keywords

    VISIBLE-LIGHT EMISSION; ELECTROLUMINESCENCE; MECHANISM; DIODES; DEVICE; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    Porous silicon layers were formed on diffused layers. Both boron and phosphorus impurities were thermally diffused using solid sources in n-Si, p-Si, n-epi/Si and p-epi/Si substrates of various resistivities. Porous silicon on these layers was formed by electrochemical and chemical etching under various etching conditions. Strong visible luminescence was observed from these porous silicon structures. Infrared absorption studies indicated that surface molecule identities are immaterial to the enhancement or degradation of photoluminescence.

    Journal Title

    Journal of Materials Science-Materials in Electronics

    Volume

    8

    Issue/Number

    3

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    163

    Last Page

    169

    WOS Identifier

    WOS:A1997XD49300008

    ISSN

    0957-4522

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