Title

Photoluminescence studies of thermal impurity diffused porous silicon layers

Authors

Authors

K. B. Sundaram; S. A. Ali; R. E. Peale;W. A. McClintic

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Mater. Sci.-Mater. Electron.

Keywords

VISIBLE-LIGHT EMISSION; ELECTROLUMINESCENCE; MECHANISM; DIODES; DEVICE; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

Abstract

Porous silicon layers were formed on diffused layers. Both boron and phosphorus impurities were thermally diffused using solid sources in n-Si, p-Si, n-epi/Si and p-epi/Si substrates of various resistivities. Porous silicon on these layers was formed by electrochemical and chemical etching under various etching conditions. Strong visible luminescence was observed from these porous silicon structures. Infrared absorption studies indicated that surface molecule identities are immaterial to the enhancement or degradation of photoluminescence.

Journal Title

Journal of Materials Science-Materials in Electronics

Volume

8

Issue/Number

3

Publication Date

1-1-1997

Document Type

Article

DOI Link

http://dx.doi.org/10.1023/a:1018594113294

Language

English

First Page

163

Last Page

169

WOS Identifier

WOS:A1997XD49300008

ISSN

0957-4522

Recommended Citation

"Photoluminescence studies of thermal impurity diffused porous silicon layers" (1997). Faculty Bibliography 1990s. 2107.
https://stars.library.ucf.edu/facultybib1990/2107