Second-order susceptibility of Ga0.5In0.5P crystals at 1.5 mu m and their feasibility for waveguide quasi-phase matching

    Authors

    Y. Ueno; V. Ricci;G. I. Stegeman

    Comments

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    Abbreviated Journal Title

    J. Opt. Soc. Am. B-Opt. Phys.

    Keywords

    CASCADED 2ND-ORDER PROCESSES; BAND-GAP ENERGY; QUANTUM-WELL; WAVE-GUIDES; ALGAINP LASER; GAAS; SUPERLATTICE; LAYER; KTP; Optics

    Abstract

    The second-order susceptibilities (d(ij)) of both ordered and disordered Ga0.5In0.5P semiconductor crystal films epitaxially grown on GaAs substrates are analyzed. Quasi-phase matching based on periodic order-disorder regions is proposed, and the analysis shows that three of the four independent coefficients, namely, d(33)' d(31)', and d(15)' but not d(14)' can be modulated. Maker-fringe experiments were performed at 1.57 mu m to measure these coefficients in the deposited crystals. However, the crystal-film orientation allowed a definitive determination of the d(14)' coefficient (110 pm/V) only and an upper limit of 60 pm/V for d'(33). More-sophisticated experimental techniques are proposed for measuring d'(33). (C) 1997 Optical Society of America.

    Journal Title

    Journal of the Optical Society of America B-Optical Physics

    Volume

    14

    Issue/Number

    6

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    1428

    Last Page

    1436

    WOS Identifier

    WOS:A1997XC63900022

    ISSN

    0740-3224

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