Title

Second-order susceptibility of Ga0.5In0.5P crystals at 1.5 mu m and their feasibility for waveguide quasi-phase matching

Authors

Authors

Y. Ueno; V. Ricci;G. I. Stegeman

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Opt. Soc. Am. B-Opt. Phys.

Keywords

CASCADED 2ND-ORDER PROCESSES; BAND-GAP ENERGY; QUANTUM-WELL; WAVE-GUIDES; ALGAINP LASER; GAAS; SUPERLATTICE; LAYER; KTP; Optics

Abstract

The second-order susceptibilities (d(ij)) of both ordered and disordered Ga0.5In0.5P semiconductor crystal films epitaxially grown on GaAs substrates are analyzed. Quasi-phase matching based on periodic order-disorder regions is proposed, and the analysis shows that three of the four independent coefficients, namely, d(33)' d(31)', and d(15)' but not d(14)' can be modulated. Maker-fringe experiments were performed at 1.57 mu m to measure these coefficients in the deposited crystals. However, the crystal-film orientation allowed a definitive determination of the d(14)' coefficient (110 pm/V) only and an upper limit of 60 pm/V for d'(33). More-sophisticated experimental techniques are proposed for measuring d'(33). (C) 1997 Optical Society of America.

Journal Title

Journal of the Optical Society of America B-Optical Physics

Volume

14

Issue/Number

6

Publication Date

1-1-1997

Document Type

Article

Language

English

First Page

1428

Last Page

1436

WOS Identifier

WOS:A1997XC63900022

ISSN

0740-3224

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