Ultrafast cross-well carrier transport in a strained multiple-quantum-well InGaAs-GaAs p-i-n modulator

    Authors

    H. S. Wang; F. J. Effenberger; P. LiKamWa;A. Miller

    Comments

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    Abbreviated Journal Title

    IEEE J. Quantum Electron.

    Keywords

    mode-locked lasers; optical modulation/demodulation; optoelectronic; devices; p-i-n diodes; quantum-confined; Stark effect; quantum-well; devices; semiconductor device modeling; ultrafast optics; EFFECT DEVICES; ELECTRON; SWEEP; TIME; Engineering, Electrical & Electronic; Optics; Physics, Applied

    Abstract

    We report ultrafast optical pump-probe measurements of cross-well carrier transport in a strained multiple-quantum-well InGaAs-GaAs p-i-n modulator. The transmission response of the modulator is recorded over a range of reverse bias values, wavelengths, and power levels, producing several qualitatively different response types, A simplified physical model is developed to describe this behavior, This model includes transmission changes due to exciton saturation and excitonic field screening, carrier emission from the quantum wells and drift through the intrinsic region, and voltage diffusion across the p- and n-doped electrodes. This model agrees well with the experimental data.

    Journal Title

    Ieee Journal of Quantum Electronics

    Volume

    33

    Issue/Number

    2

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    192

    Last Page

    197

    WOS Identifier

    WOS:A1997WD89400009

    ISSN

    0018-9197

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