Current-dependent collector resistance of the bipolar transistor in quasi-saturation

    Authors

    Y. Dai;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEE Proc.-Circuit Device Syst.

    Keywords

    quasi-saturation; bipolar transistor; MEDICI simulation; current-dependent collector resistance; MODEL; Engineering, Electrical & Electronic

    Abstract

    The current-dependent collector resistance of the bipolar transistor in quasisaturation has been modelled, The analytical collector resistance model is derived from device physics. The MEDICI simulation is employed to justify the assumptions used in the model derivation. The high-current collector current spreading effect on the collector resistance is accounted for. and the predictions of the collector current. using the current-dependent collector resistance model are compared with the experimental data. Good agreement between the model predictions and experimental data has been obtained.

    Journal Title

    Iee Proceedings-Circuits Devices and Systems

    Volume

    145

    Issue/Number

    2

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    66

    Last Page

    70

    WOS Identifier

    WOS:000073434400002

    ISSN

    1350-2409

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