Title

Microstructural development of SCS-6 SiC fibers during high temperature creep

Authors

Authors

L. A. Giannuzzi; C. A. Lewinsohn; C. E. Bakis;R. E. Tressler

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Mater. Res.

Keywords

TRANSFORMATION; FILAMENTS; Materials Science, Multidisciplinary

Abstract

Microstructural development of SCS-6 SiC fibers induced by creep deformation at 1400 degrees C is presented. Grain growth occurs in all SiC regions of the fiber during creep. Portions of the SiC4 region transform from beta SiC to alpha SiC growing at the expense of the beta SiC The SiC1 through SiC3 regions of the fiber consist of a distinct (C + beta SiC) two-phase region. The grain growth of the beta SiC grains in the two-phase region is not as extensive as in the SiC4 region, suggesting that the presence of excess carbon may inhibit the growth of beta SiC.

Journal Title

Journal of Materials Research

Volume

13

Issue/Number

7

Publication Date

1-1-1998

Document Type

Article

DOI Link

http://dx.doi.org/10.1557/jmr.1998.0263

Language

English

First Page

1853

Last Page

1860

WOS Identifier

WOS:000074502800024

ISSN

0884-2914

Recommended Citation

"Microstructural development of SCS-6 SiC fibers during high temperature creep" (1998). Faculty Bibliography 1990s. 2253.
https://stars.library.ucf.edu/facultybib1990/2253