Microstructural development of SCS-6 SiC fibers during high temperature creep

    Authors

    L. A. Giannuzzi; C. A. Lewinsohn; C. E. Bakis;R. E. Tressler

    Comments

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    Abbreviated Journal Title

    J. Mater. Res.

    Keywords

    TRANSFORMATION; FILAMENTS; Materials Science, Multidisciplinary

    Abstract

    Microstructural development of SCS-6 SiC fibers induced by creep deformation at 1400 degrees C is presented. Grain growth occurs in all SiC regions of the fiber during creep. Portions of the SiC4 region transform from beta SiC to alpha SiC growing at the expense of the beta SiC The SiC1 through SiC3 regions of the fiber consist of a distinct (C + beta SiC) two-phase region. The grain growth of the beta SiC grains in the two-phase region is not as extensive as in the SiC4 region, suggesting that the presence of excess carbon may inhibit the growth of beta SiC.

    Journal Title

    Journal of Materials Research

    Volume

    13

    Issue/Number

    7

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    1853

    Last Page

    1860

    WOS Identifier

    WOS:000074502800024

    ISSN

    0884-2914

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