Gate-oxide thickness effects on hot-carrier-induced degradation in n-MOSFETs

    Authors

    Y. Gu;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    INTERFACE-STATE GENERATION; P-MOSFETS; ELECTRON; MODEL; MOBILITY; DEPENDENCE; INJECTION; INVERSION; NMOSFETS; Engineering, Electrical & Electronic

    Abstract

    The gate-oxide thickness effects on hot-carrier-induced degradation have been investigated for submicron MOSFETs. A thinner gate oxide gives a higher substrate current, but reduced hot-electron effects. This is because the thin-gate-oxide device has smaller mobility and threshold voltage degradation due to a shift of damaged interface region towards the drain contact. The analytical substrate and drain current model has been derived. The model predictions are in good agreement with the experimental data for submicron MOSFETs with different oxide thicknesses.

    Journal Title

    International Journal of Electronics

    Volume

    85

    Issue/Number

    1

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    1

    Last Page

    9

    WOS Identifier

    WOS:000074170800001

    ISSN

    0020-7217

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