Three-photon absorption in InAs

    Authors

    M. P. Hasselbeck; A. A. Said; E. W. van Stryland;M. Sheik-Bahae

    Comments

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    Abbreviated Journal Title

    Opt. Quantum Electron.

    Keywords

    PICOSECOND INFRARED-SPECTROSCOPY; HOT HOLES; SEMICONDUCTORS; PULSES; INSB; Engineering, Electrical & Electronic; Optics

    Abstract

    Using 125 ps laser pulses, we observe three-photon absorption in room temperature InAs at a wavelength of 9.54 mu m. This effect is readily identified by temperature-tuning the semiconductor bandgap through the three-photon absorption edge. A three-photon absorption coefficient of K-3 = 1 +/- 0.6 x 10(-3) cm(3) MW-2 is extracted from non-linear absorption data obtained with an open-aperture Z-scan. Time-resolved measurement at high irradiance reveals an increase of absorption due to hot carriers. We also present an autocorrelation measurement of our CO2 laser pulse that shows two complete optical free-induction-decay cycles.

    Journal Title

    Optical and Quantum Electronics

    Volume

    30

    Issue/Number

    3

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    193

    Last Page

    200

    WOS Identifier

    WOS:000074640400006

    ISSN

    0306-8919

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