Title

Three-photon absorption in InAs

Authors

Authors

M. P. Hasselbeck; A. A. Said; E. W. van Stryland;M. Sheik-Bahae

Comments

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Abbreviated Journal Title

Opt. Quantum Electron.

Keywords

PICOSECOND INFRARED-SPECTROSCOPY; HOT HOLES; SEMICONDUCTORS; PULSES; INSB; Engineering, Electrical & Electronic; Optics

Abstract

Using 125 ps laser pulses, we observe three-photon absorption in room temperature InAs at a wavelength of 9.54 mu m. This effect is readily identified by temperature-tuning the semiconductor bandgap through the three-photon absorption edge. A three-photon absorption coefficient of K-3 = 1 +/- 0.6 x 10(-3) cm(3) MW-2 is extracted from non-linear absorption data obtained with an open-aperture Z-scan. Time-resolved measurement at high irradiance reveals an increase of absorption due to hot carriers. We also present an autocorrelation measurement of our CO2 laser pulse that shows two complete optical free-induction-decay cycles.

Journal Title

Optical and Quantum Electronics

Volume

30

Issue/Number

3

Publication Date

1-1-1998

Document Type

Article

DOI Link

http://dx.doi.org/10.1023/a:1006962228937

Language

English

First Page

193

Last Page

200

WOS Identifier

WOS:000074640400006

ISSN

0306-8919

Recommended Citation

"Three-photon absorption in InAs" (1998). Faculty Bibliography 1990s. 2275.
https://stars.library.ucf.edu/facultybib1990/2275