Title

Long-term base current instability in AlGaAs/GaAs HBTs: physical mechanisms, modeling, and SPICE simulation

Authors

Authors

J. J. Liou

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

This paper provides an overview of the long-term base current instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT), which is a main mechanism governing the HBT long-term current gain drift and thus a major concern for the HBT reliability. Topics covered include: (1) types of base current instability and their underlying physical mechanisms; (2) leakage currents in the HBT and their relevance to the reliability; (3) electrothermal interaction and their impact on the HBT reliability; (4) analytic model for predicting the HBTs mean time to failure (MTTF); and (5) SPICE implementation and simulation of HBT circuit reliability. Measurements and device simulation results are also included in support of the modeling and analysis. (C) 1998 Elsevier Science Ltd. All rights reserved.

Journal Title

Microelectronics and Reliability

Volume

38

Issue/Number

5

Publication Date

1-1-1998

Document Type

Article

Language

English

First Page

709

Last Page

725

WOS Identifier

WOS:000074874400001

ISSN

0026-2714

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