Title
Growth of III-nitrides on ZnO, LiGaO2, and LiAlO2 substrates
Abbreviated Journal Title
J. Electrochem. Soc.
Keywords
Electrochemistry; Materials Science, Coatings & Films
Abstract
The use of oxide substrates for growth of III-nitride materials has been investigated. ZnO did not produce any improvement in InAln or AlN material quality over that obtained using optimized growth conditions on sapphire or GaAs. This is believed to be due to the poor thermal stability of ZnO and to the absence of the formation of a nitride layer at the substrate surface which acts as both a protective layer and as an aid to nucleation. The poor thermal stability of the ZnO prevented the use of a pre-growth plasma anneal. Such an anneal was found to produce significant improvement in the surface morphology and structural quality of AlN grown on sapphire. Though (100) LiGaO2 and (100) LiAlO2 exhibited greater thermal stability, preliminary experiments on growth of GaN on LiGaO2 and InN on LiAlO2 suggest that, as for sapphire, low temperature buffers may be required to improve nucleation behavior.
Journal Title
Journal of the Electrochemical Society
Volume
145
Issue/Number
7
Publication Date
1-1-1998
Document Type
Article
DOI Link
Language
English
First Page
2581
Last Page
2585
WOS Identifier
ISSN
0013-4651
Recommended Citation
"Growth of III-nitrides on ZnO, LiGaO2, and LiAlO2 substrates" (1998). Faculty Bibliography 1990s. 2345.
https://stars.library.ucf.edu/facultybib1990/2345
Comments
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