Title

Population inversion of Landau levels in the valence band of silicon in crossed electric and magnetic fields

Authors

Authors

A. V. Muravjov; R. C. Strijbos; W. T. Wenckebach;V. N. Shastin

Comments

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Abbreviated Journal Title

Phys. Status Solidi B-Basic Res.

Keywords

P-TYPE GE; HOT HOLES; STIMULATED-EMISSION; CYCLOTRON-RESONANCE; LASER; SEMICONDUCTORS; GERMANIUM; Physics, Condensed Matter

Abstract

The Landau level structure of the degenerate valence band of silicon in crossed electric and mag netic fields (B = 5 T, E = 0 to 5 kV cm(-1)) has been calculated using the complete effective mass Hamiltonian for the three valence subbands. The calculations reveal a population inversion between light hole Landau levels at cryogenic temperatures due to a strongly level-dependent scattering on optical phonons, which is caused by quantum mechanical mixing of light and heavy hole states in crossed E and B fields. The possibility of amplification of far-infrared radiation on light hole cyclotron resonance transitions is discussed.

Journal Title

Physica Status Solidi B-Basic Research

Volume

205

Issue/Number

2

Publication Date

1-1-1998

Document Type

Article

DOI Link

http://dx.doi.org/10.1002/(sici)1521-3951(199802)205:2<575::aid-pssb575>3.0.co;2-a

Language

English

First Page

575

Last Page

585

WOS Identifier

WOS:000072138300020

ISSN

0370-1972

Recommended Citation

"Population inversion of Landau levels in the valence band of silicon in crossed electric and magnetic fields" (1998). Faculty Bibliography 1990s. 2377.
https://stars.library.ucf.edu/facultybib1990/2377