Population inversion of Landau levels in the valence band of silicon in crossed electric and magnetic fields

    Authors

    A. V. Muravjov; R. C. Strijbos; W. T. Wenckebach;V. N. Shastin

    Comments

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    Abbreviated Journal Title

    Phys. Status Solidi B-Basic Res.

    Keywords

    P-TYPE GE; HOT HOLES; STIMULATED-EMISSION; CYCLOTRON-RESONANCE; LASER; SEMICONDUCTORS; GERMANIUM; Physics, Condensed Matter

    Abstract

    The Landau level structure of the degenerate valence band of silicon in crossed electric and mag netic fields (B = 5 T, E = 0 to 5 kV cm(-1)) has been calculated using the complete effective mass Hamiltonian for the three valence subbands. The calculations reveal a population inversion between light hole Landau levels at cryogenic temperatures due to a strongly level-dependent scattering on optical phonons, which is caused by quantum mechanical mixing of light and heavy hole states in crossed E and B fields. The possibility of amplification of far-infrared radiation on light hole cyclotron resonance transitions is discussed.

    Journal Title

    Physica Status Solidi B-Basic Research

    Volume

    205

    Issue/Number

    2

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    575

    Last Page

    585

    WOS Identifier

    WOS:000072138300020

    ISSN

    0370-1972

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