Population inversion of Landau levels in the valence band of silicon in crossed electric and magnetic fields
Abbreviated Journal Title
Phys. Status Solidi B-Basic Res.
P-TYPE GE; HOT HOLES; STIMULATED-EMISSION; CYCLOTRON-RESONANCE; LASER; SEMICONDUCTORS; GERMANIUM; Physics, Condensed Matter
The Landau level structure of the degenerate valence band of silicon in crossed electric and mag netic fields (B = 5 T, E = 0 to 5 kV cm(-1)) has been calculated using the complete effective mass Hamiltonian for the three valence subbands. The calculations reveal a population inversion between light hole Landau levels at cryogenic temperatures due to a strongly level-dependent scattering on optical phonons, which is caused by quantum mechanical mixing of light and heavy hole states in crossed E and B fields. The possibility of amplification of far-infrared radiation on light hole cyclotron resonance transitions is discussed.
Physica Status Solidi B-Basic Research
"Population inversion of Landau levels in the valence band of silicon in crossed electric and magnetic fields" (1998). Faculty Bibliography 1990s. 2377.