An improved definition for modeling the threshold voltage of MOSFETs

    Authors

    A. Ortiz-Conde; J. Rodriguez; F. J. G. Sanchez;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Traditionally, the threshold voltage V-T of MOSFETs is modeled using the definition that the strong inversion occurs when the surface band bending is equal to twice the potential in bulk semiconductor. In this paper, an improved V-T definition is proposed. It is demonstrated that V-T calculated from the improved definition is in better agreement with those obtained from several existing V-T extraction methods than the conventional definition. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    42

    Issue/Number

    9

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    1743

    Last Page

    1746

    WOS Identifier

    WOS:000076156200017

    ISSN

    0038-1101

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