Title

An improved definition for modeling the threshold voltage of MOSFETs

Authors

Authors

A. Ortiz-Conde; J. Rodriguez; F. J. G. Sanchez;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Traditionally, the threshold voltage V-T of MOSFETs is modeled using the definition that the strong inversion occurs when the surface band bending is equal to twice the potential in bulk semiconductor. In this paper, an improved V-T definition is proposed. It is demonstrated that V-T calculated from the improved definition is in better agreement with those obtained from several existing V-T extraction methods than the conventional definition. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

42

Issue/Number

9

Publication Date

1-1-1998

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0038-1101(98)00138-5

Language

English

First Page

1743

Last Page

1746

WOS Identifier

WOS:000076156200017

ISSN

0038-1101

Recommended Citation

"An improved definition for modeling the threshold voltage of MOSFETs" (1998). Faculty Bibliography 1990s. 2393.
https://stars.library.ucf.edu/facultybib1990/2393