Theoretical investigation of the electrical behavior of SiC MESFETs for microwave power amplification

    Authors

    F. Schwierz; M. Roschke; J. J. Liou;G. Paasch

    Comments

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    Keywords

    SiC MESFET; device simulation; microwave devices; cut-off frequency; output power; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films

    Abstract

    The electrical behavior of 3C, 4H, and 6H SiC MESFETs has been simulated using an analytical two region transistor model which takes into account the nonlinear v-E characteristics, incomplete ionization, and self heating. The results show that the 4H SiC polytype is best suited for microwave power MESFETs, but 3C and 6H SiC also seem to be useful materials for this purpose. Using Si instead of SiC al the subtrate material causes increased channel temperatures and a deterioration of the transistor performance at high gate-source voltages.

    Journal Title

    Silicon Carbide, Iii-Nitrides and Related Materials, Pts 1 and 2

    Volume

    264-2

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    973

    Last Page

    976

    WOS Identifier

    WOS:000072751000231

    ISSN

    0255-5476; 0-87849-790-0

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