Title
Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs
Abbreviated Journal Title
Microelectron. Reliab.
Keywords
Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
An abnormal base current behavior with an ideality of about 3 is often observed in the AlGaAs/GaAs HBT after it is subjected to a high temperature/electrical burn-in condition. Using a two-dimensional device simulator, this paper studies and determines the main physical mechanisms contributing to such an abnormality. Data measured from two post-burn-in HBTs are included in support of the finding. (C) 1998 Published by Elsevier Science Ltd.
Journal Title
Microelectronics and Reliability
Volume
38
Issue/Number
1
Publication Date
1-1-1998
Document Type
Article
Language
English
First Page
163
Last Page
170
WOS Identifier
ISSN
0026-2714
Recommended Citation
"Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs" (1998). Faculty Bibliography 1990s. 2448.
https://stars.library.ucf.edu/facultybib1990/2448
Comments
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