Title

Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs

Authors

Authors

S. Sheu; J. J. Liou;C. I. Huang

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

An abnormal base current behavior with an ideality of about 3 is often observed in the AlGaAs/GaAs HBT after it is subjected to a high temperature/electrical burn-in condition. Using a two-dimensional device simulator, this paper studies and determines the main physical mechanisms contributing to such an abnormality. Data measured from two post-burn-in HBTs are included in support of the finding. (C) 1998 Published by Elsevier Science Ltd.

Journal Title

Microelectronics and Reliability

Volume

38

Issue/Number

1

Publication Date

1-1-1998

Document Type

Article

Language

English

First Page

163

Last Page

170

WOS Identifier

WOS:000072771600016

ISSN

0026-2714

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