Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs

    Authors

    S. Sheu; J. J. Liou;C. I. Huang

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    An abnormal base current behavior with an ideality of about 3 is often observed in the AlGaAs/GaAs HBT after it is subjected to a high temperature/electrical burn-in condition. Using a two-dimensional device simulator, this paper studies and determines the main physical mechanisms contributing to such an abnormality. Data measured from two post-burn-in HBTs are included in support of the finding. (C) 1998 Published by Elsevier Science Ltd.

    Journal Title

    Microelectronics and Reliability

    Volume

    38

    Issue/Number

    1

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    163

    Last Page

    170

    WOS Identifier

    WOS:000072771600016

    ISSN

    0026-2714

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