Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs
Abbreviated Journal Title
Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
An abnormal base current behavior with an ideality of about 3 is often observed in the AlGaAs/GaAs HBT after it is subjected to a high temperature/electrical burn-in condition. Using a two-dimensional device simulator, this paper studies and determines the main physical mechanisms contributing to such an abnormality. Data measured from two post-burn-in HBTs are included in support of the finding. (C) 1998 Published by Elsevier Science Ltd.
Microelectronics and Reliability
"Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs" (1998). Faculty Bibliography 1990s. 2448.