Title

Photoluminescence enhancement in porous silicon layers

Authors

Authors

K. B. Sundaram; J. Alizadeh; S. Albin; J. Zheng;A. Lavarias

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Mater. Sci.-Mater. Electron.

Keywords

Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

Abstract

Porous silicon samples were prepared on diamond scratched n-type and p-type silicon substrates with various resistivities. Photoluminescence studies performed on these porous silicon layers indicated an enhancement of photoluminescence intensity as well as red-shifting for diamond scratched samples compared to unscratched samples. (C) 1998 Kluwer Academic Publishers.

Journal Title

Journal of Materials Science-Materials in Electronics

Volume

9

Issue/Number

4

Publication Date

1-1-1998

Document Type

Article

DOI Link

http://dx.doi.org/10.1023/a:1008868421127

Language

English

First Page

271

Last Page

274

WOS Identifier

WOS:000077310900003

ISSN

0957-4522

Recommended Citation

"Photoluminescence enhancement in porous silicon layers" (1998). Faculty Bibliography 1990s. 2464.
https://stars.library.ucf.edu/facultybib1990/2464