Photoluminescence enhancement in porous silicon layers

    Authors

    K. B. Sundaram; J. Alizadeh; S. Albin; J. Zheng;A. Lavarias

    Comments

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    Abbreviated Journal Title

    J. Mater. Sci.-Mater. Electron.

    Keywords

    Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    Porous silicon samples were prepared on diamond scratched n-type and p-type silicon substrates with various resistivities. Photoluminescence studies performed on these porous silicon layers indicated an enhancement of photoluminescence intensity as well as red-shifting for diamond scratched samples compared to unscratched samples. (C) 1998 Kluwer Academic Publishers.

    Journal Title

    Journal of Materials Science-Materials in Electronics

    Volume

    9

    Issue/Number

    4

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    271

    Last Page

    274

    WOS Identifier

    WOS:000077310900003

    ISSN

    0957-4522

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