A scalable bipolar transistor model for circuit simulation

    Authors

    J. S. Yuan; Y. Dai;C. S. Yeh

    Comments

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    Abbreviated Journal Title

    Phys. Status Solidi A-Appl. Res.

    Keywords

    Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A scalable bipolar transistor model for circuit simulation has been developed. The model accounts for two-dimensional effects such as emitter crowding and emitter-base sidewall injection. The model parameters are scalable and can predict the bipolar transistor parameters with different emitter widths and lengths. The scalable model is applicable for bipolar transistor at different temperatures.

    Journal Title

    Physica Status Solidi a-Applied Research

    Volume

    168

    Issue/Number

    1

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    209

    Last Page

    222

    WOS Identifier

    WOS:000075226500021

    ISSN

    0031-8965

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