Title
A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect
Abbreviated Journal Title
Int. J. Electron.
Keywords
DEPLETED SOI MOSFETS; MODEL; Engineering, Electrical & Electronic
Abstract
A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conducting path between the channel and substrate. The device has been verified in two-dimensional device simulation. This new structure reduces device self-heating and increases the drain of the SOI MOSFET.
Journal Title
International Journal of Electronics
Volume
86
Issue/Number
6
Publication Date
1-1-1999
Document Type
Article
Language
English
First Page
707
Last Page
712
WOS Identifier
ISSN
0020-7217
Recommended Citation
"A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect" (1999). Faculty Bibliography 1990s. 2542.
https://stars.library.ucf.edu/facultybib1990/2542
Comments
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