A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect

    Authors

    R. Awadallah;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    DEPLETED SOI MOSFETS; MODEL; Engineering, Electrical & Electronic

    Abstract

    A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conducting path between the channel and substrate. The device has been verified in two-dimensional device simulation. This new structure reduces device self-heating and increases the drain of the SOI MOSFET.

    Journal Title

    International Journal of Electronics

    Volume

    86

    Issue/Number

    6

    Publication Date

    1-1-1999

    Document Type

    Article

    Language

    English

    First Page

    707

    Last Page

    712

    WOS Identifier

    WOS:000080157100005

    ISSN

    0020-7217

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