Title

A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect

Authors

Authors

R. Awadallah;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Int. J. Electron.

Keywords

DEPLETED SOI MOSFETS; MODEL; Engineering, Electrical & Electronic

Abstract

A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conducting path between the channel and substrate. The device has been verified in two-dimensional device simulation. This new structure reduces device self-heating and increases the drain of the SOI MOSFET.

Journal Title

International Journal of Electronics

Volume

86

Issue/Number

6

Publication Date

1-1-1999

Document Type

Article

Language

English

First Page

707

Last Page

712

WOS Identifier

WOS:000080157100005

ISSN

0020-7217

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