Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
Hot-Hole Laser; Physics; Applied
Abstract
Active mode locking of the far-infrared p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields applied to the laser crystal. The laser generates 200 ps pulses of 80-110 cm(-1) radiation with a laser-cavity roundtrip frequency of 454 MHz. The mechanism of gain modulation by the external rf electric field is based on induced electric-field gradients inside the active crystal and requires less rf power than was found previously for Voigt geometry.
Journal Title
Applied Physics Letters
Volume
75
Issue/Number
19
Publication Date
1-1-1999
Document Type
Article
DOI Link
Language
English
First Page
2882
Last Page
2884
WOS Identifier
ISSN
0003-6951
Recommended Citation
Muravjov, A. V.; Withers, S. H.; Strijbos, R. C.; Pavlov, S. G.; Shastin, V. N.; and Peale, R. E., "Actively mode-locked p-Ge laser in Faraday configuration" (1999). Faculty Bibliography 1990s. 2758.
https://stars.library.ucf.edu/facultybib1990/2758
Comments
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