Authors

A. V. Muravjov; S. H. Withers; R. C. Strijbos; S. G. Pavlov; V. N. Shastin;R. E. Peale

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

HOT-HOLE LASER; Physics, Applied

Abstract

Active mode locking of the far-infrared p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields applied to the laser crystal. The laser generates 200 ps pulses of 80-110 cm(-1) radiation with a laser-cavity roundtrip frequency of 454 MHz. The mechanism of gain modulation by the external rf electric field is based on induced electric-field gradients inside the active crystal and requires less rf power than was found previously for Voigt geometry. (C) 1999 American Institute of Physics. [S0003-6951(99)01045-1].

Journal Title

Applied Physics Letters

Volume

75

Issue/Number

19

Publication Date

1-1-1999

Document Type

Article

Language

English

First Page

2882

Last Page

2884

WOS Identifier

WOS:000083483900004

ISSN

0003-6951

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