Physics-Based Large-Signal Heterojunction Bipolar-Transistor Model For Circuit Simulation

    Authors

    J. J. Liou;J. S. Yuan

    Comments

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    Abstract

    A comprehensive single heterojunction bipolar transistor (HBT) model suited for circuit simulation is presented. The model is developed in the Gummel-Poon homojunction bipolar transistor model tradition, but adds important heterostructure device physics as well as physical properties of 3 or 4 compound materials such as AlGaAs and GaAs. In contrast to the existing HBT models, which use the Gummel-Poon model and fit HBT experimental data by optimising a large pool of parameters extracted from HBT measurements, the present physics-based model requires only the knowledge of the device make-up (such as the doping concentration and layer thickness) and the material parameters (such as the energy bandgap and electron affinity). Comparisons between the model and measured dependencies for AlGaAs/GaAs/GaAs HBTs on important device specifications such as the DC current/voltage characteristics, DC current gain, and cutoff frequency are included.

    Journal Title

    Iee Proceedings-G Circuits Devices and Systems

    Volume

    138

    Issue/Number

    1

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    97

    Last Page

    103

    WOS Identifier

    WOS:A1991EV25000018

    ISSN

    0956-3768

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