Laser-Induced Darkening In Semiconductor-Doped Glasses

    Authors

    J. Malhotra; D. J. Hagan;B. G. Potter

    Comments

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    Abbreviated Journal Title

    J. Opt. Soc. Am. B-Opt. Phys.

    Abstract

    We have performed experiments to characterize permanent laser-induced darkening in CdS(x)Se1-x semiconductor-doped glasses with picosecond pulses as a function of fluence, repetition rate, and pulse width. We find that the darkening occurs by means of a nonlinear process that exhibits an anomalous dependence on pulse width. Transmission spectra show that the induced darkening is uniform over the spectral range from the absorption edge out to 820-mu-m. Darkening in a number of different glasses is compared. On the basis of our results we propose a mechanism that involves photoassisted trapping of electrons from the semiconductor microcrystallites into states within the glass host material.

    Journal Title

    Journal of the Optical Society of America B-Optical Physics

    Volume

    8

    Issue/Number

    7

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    1531

    Last Page

    1536

    WOS Identifier

    WOS:A1991FV32300024

    ISSN

    0740-3224

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