Wet thermal oxidation of GaN

    Authors

    E. D. Readinger; S. D. Wolter; D. L. Waltemyer; J. M. Delucca; S. E. Mohney; B. I. Prenitzer; L. A. Giannuzzi;R. J. Molnar

    Comments

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    Abbreviated Journal Title

    J. Electron. Mater.

    Keywords

    GaN; thermal oxidation; GALLIUM NITRIDE; FILMS; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

    Abstract

    Thermal oxidation of GaN was conducted at 700-900 degrees C with O-2, N-2, and Ar as carrier gases for 525-630 Torr of H2O vapor. Upon oxidation of both GaN powders and n-GaN epilayers, the monoclinic beta-Ga2O3 phase was identified using glancing angle x-ray diffraction. The chemical composition of the oxide was verified using x-ray photoelectron spectroscopy. In experiments conducted using GaN powder, the oxide grew most rapidly when O-2 was the carrier gas for H2O. The same result was obtained on n-type GaN epilayers. Furthermore, the thickness of the oxide grown in H2O with O-2 as the carrier gas was found to be proportional to the oxidation time at all temperatures studied, and an activation energy of 210+/-10 kJ/mol was obtained. Scanning electron microscopy revealed a smoother surface after wet oxidation than was reported previously for dry oxidation. However, cross-sectional transmission electron microscopy revealed that the wet oxide/GaN interface was irregular and non-ideal for device fabrication, even more so than the dry oxide/GaN interface. This observation was consistent with poor electrical properties.

    Journal Title

    Journal of Electronic Materials

    Volume

    28

    Issue/Number

    3

    Publication Date

    1-1-1999

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    257

    Last Page

    260

    WOS Identifier

    WOS:000079240000024

    ISSN

    0361-5235

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