Reliability investigation of InGaP/GaAs HBTs under current and temperature stress

    Authors

    A. A. Rezazadeh; S. A. Bashar; H. Sheng; F. A. Amin; A. H. Khalid; M. Sotoodeh; M. A. Crouch; L. Cattani; F. Fantini;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; MOCVD; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The reliability of InGaP/GaAs N-p-n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping Impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device de current gain, The instability phenomena typical of each factors and their effects on the HBT characteristics are reported. (C) 1999 Elsevier Science Ltd, All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    39

    Issue/Number

    12

    Publication Date

    1-1-1999

    Document Type

    Article

    Language

    English

    First Page

    1809

    Last Page

    1816

    WOS Identifier

    WOS:000084310300010

    ISSN

    0026-2714

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