On the extraction of the source and drain series resistances of MOSFETs

    Authors

    F. J. G. Sanchez; A. Ortiz-Conde;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    EFFECTIVE CHANNEL-LENGTH; LDD MOSFETS; MOS-TRANSISTOR; PARAMETER; EXTRACTION; THRESHOLD VOLTAGE; PARASITIC SOURCE; DIFFERENCE; CONDUCTANCES; DEVICE; GATE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This article reviews and scrutinizes various proposed methods to extract the individual values of drain and source resistances (R-D and R-S) of MOSFETs, which are important device parameters for modeling and circuit simulation. In general, these methods contain three basic steps: (1) the extraction of the total drain and source resistance (R-D + R-S); (2) the extraction of the difference between the drain and the source resistances (R-D - R-S); and (3) the calculation of R-D and R-S from the knowledge of (R-D + R-S) and (R-D - R-S). These methods are tested and compared in the environments of circuit simulator, device simulation and measurements. (C) 1999 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    39

    Issue/Number

    8

    Publication Date

    1-1-1999

    Document Type

    Article

    Language

    English

    First Page

    1173

    Last Page

    1184

    WOS Identifier

    WOS:000083472200002

    ISSN

    0026-2714

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