A procedure for the extraction of the bulk-charge effect parameter in MOSFET models

    Authors

    F. J. G. Sanchez; A. Ortiz-Conde; J. A. Salcedo; J. J. Liou;Y. Yue

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A technique is proposed to extract the bulk-charge effect parameter from the triode region of operation of the MOSFET characteristics. The method involves making two measurements of drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested on synthetic I-d-V-gs, characteristics modeled with SPICE and simulated by a 2D device simulator. It was also applied to measured I-d-V-gs characteristics of real devices. Both constant and normal field dependent mobilities were considered for comparison. Very good agreement is obtained between the parameters used in modeling and simulation and the extracted values. (C) 1999 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    43

    Issue/Number

    7

    Publication Date

    1-1-1999

    Document Type

    Article

    Language

    English

    First Page

    1295

    Last Page

    1298

    WOS Identifier

    WOS:000081589200018

    ISSN

    0038-1101

    Share

    COinS