Graded base profiles on the performance of AlGaAs HBTs

    Authors

    J. Song;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; CURRENT GAIN; Engineering, Electrical & Electronic

    Abstract

    Effects of graded base profiles on the performance of AlGaAs HBTs have been examined. The exponential graded base gives highest electron current density for given base-emitter voltage. The parabolic base profile results in lowest base transit time followed by exponential, Gaussian, square root and linear base profiles. For the base resistivity, however, the linearly graded base gives lowest base sheet resistance for given base concentration.

    Journal Title

    International Journal of Electronics

    Volume

    86

    Issue/Number

    6

    Publication Date

    1-1-1999

    Document Type

    Article

    Language

    English

    First Page

    699

    Last Page

    705

    WOS Identifier

    WOS:000080157100004

    ISSN

    0020-7217

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