Title

Graded base profiles on the performance of AlGaAs HBTs

Authors

Authors

J. Song;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Int. J. Electron.

Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; CURRENT GAIN; Engineering, Electrical & Electronic

Abstract

Effects of graded base profiles on the performance of AlGaAs HBTs have been examined. The exponential graded base gives highest electron current density for given base-emitter voltage. The parabolic base profile results in lowest base transit time followed by exponential, Gaussian, square root and linear base profiles. For the base resistivity, however, the linearly graded base gives lowest base sheet resistance for given base concentration.

Journal Title

International Journal of Electronics

Volume

86

Issue/Number

6

Publication Date

1-1-1999

Document Type

Article

DOI Link

http://dx.doi.org/10.1080/002072199133157

Language

English

First Page

699

Last Page

705

WOS Identifier

WOS:000080157100004

ISSN

0020-7217

Recommended Citation

"Graded base profiles on the performance of AlGaAs HBTs" (1999). Faculty Bibliography 1990s. 2860.
https://stars.library.ucf.edu/facultybib1990/2860