Title

Incomplete ionization in a semiconductor and its implications to device modeling

Authors

Authors

G. Xiao; J. Lee; J. J. Liou;A. Ortiz-Conde

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

The ionization of impurity atoms is an important process in determining the number of free carriers, and thus the conductivity and other physical properties, in semiconductors. In this paper, a detailed derivation for the ionization percentage of impurity atoms is given. Furthermore, to illustrate the errors associated with the conventional complete ionization assumption, the results are applied to the modeling of the current-voltage characteristics of a p/n junction diode. Two-dimensional device simulations are included in support of the model. (C) 1999 Elsevier Science Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

39

Issue/Number

8

Publication Date

1-1-1999

Document Type

Article

Language

English

First Page

1299

Last Page

1303

WOS Identifier

WOS:000083472200011

ISSN

0026-2714

Share

COinS