Incomplete ionization in a semiconductor and its implications to device modeling

    Authors

    G. Xiao; J. Lee; J. J. Liou;A. Ortiz-Conde

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The ionization of impurity atoms is an important process in determining the number of free carriers, and thus the conductivity and other physical properties, in semiconductors. In this paper, a detailed derivation for the ionization percentage of impurity atoms is given. Furthermore, to illustrate the errors associated with the conventional complete ionization assumption, the results are applied to the modeling of the current-voltage characteristics of a p/n junction diode. Two-dimensional device simulations are included in support of the model. (C) 1999 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    39

    Issue/Number

    8

    Publication Date

    1-1-1999

    Document Type

    Article

    Language

    English

    First Page

    1299

    Last Page

    1303

    WOS Identifier

    WOS:000083472200011

    ISSN

    0026-2714

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