Title
Incomplete ionization in a semiconductor and its implications to device modeling
Abbreviated Journal Title
Microelectron. Reliab.
Keywords
Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
The ionization of impurity atoms is an important process in determining the number of free carriers, and thus the conductivity and other physical properties, in semiconductors. In this paper, a detailed derivation for the ionization percentage of impurity atoms is given. Furthermore, to illustrate the errors associated with the conventional complete ionization assumption, the results are applied to the modeling of the current-voltage characteristics of a p/n junction diode. Two-dimensional device simulations are included in support of the model. (C) 1999 Elsevier Science Ltd. All rights reserved.
Journal Title
Microelectronics Reliability
Volume
39
Issue/Number
8
Publication Date
1-1-1999
Document Type
Article
Language
English
First Page
1299
Last Page
1303
WOS Identifier
ISSN
0026-2714
Recommended Citation
"Incomplete ionization in a semiconductor and its implications to device modeling" (1999). Faculty Bibliography 1990s. 2904.
https://stars.library.ucf.edu/facultybib1990/2904
Comments
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