Abbreviated Journal Title
J. Vac. Sci. Technol. A-Vac. Surf. Films
Keywords
Electron Field-Emission; Microwave Plasmas; Polycrystalline; Microstructure; Impurities; Methane; Materials Science; Coatings & Films; Physics; Applied
Abstract
Nitrogen has been successfully incorporated into nanocrystalline diamond films produced by a CH4/N-2 microwave plasma-enhanced chemical vapor deposition method. High mass resolution secondary ion mass spectrometry (SIMS) characterization shows that the density of the incorporated nitrogen, monitored via CN-, can be as high as 10(21) atoms/cm(3) depending on the ratio of CH4 to N-2 in the reactant gas and on the substrate temperature used for the film preparation. SIMS depth profiles demonstrate that the incorporated nitrogen is uniform within the diamond films (about 1.5 mu m thick) except at the surfaces and at the interface between film and substrate. Furthermore, the SIMS analyses reveal that alkali elements such as Na, K, and Li appear to be contaminants at the surface of nanocrystalline diamond films produced using a CH4/Ar or CH4/H-2 discharge, but are bulk impurities only for the films prepared using a CH4/N-2 plasma. These alkali impurities can play an important role in electronic properties such as electron field emissions of nanocrystalline diamond thin films.
Journal Title
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
Volume
17
Issue/Number
4
Publication Date
1-1-1999
Document Type
Article; Proceedings Paper
DOI Link
Language
English
First Page
1135
Last Page
1140
WOS Identifier
ISSN
0734-2101
Recommended Citation
Zhou, D.; Stevie, F. A.; Chow, L.; McKinley, J.; Gnaser, H.; and Desai, V. H., "Nitrogen incorporation and trace element analysis of nanocrystalline diamond thin films by secondary ion mass spectrometry" (1999). Faculty Bibliography 1990s. 2916.
https://stars.library.ucf.edu/facultybib1990/2916
Comments
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