Series Resistance And Effective Channel-Length Extraction Of N-Channel Mosfet At 77-K

    Authors

    A. Ortizconde; J. J. Liou; M. G. Sanchez; M. G. Nunez;R. L. Anderson

    Comments

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    Abbreviated Journal Title

    Electron. Lett.

    Keywords

    MOSFETS; SEMICONDUCTOR DEVICE CHARACTERIZATION; MODEL; Engineering, Electrical & Electronic

    Abstract

    A simple method is presented to extract the effective channel length and series resistance of n-channel MOSFETs having 0.6-2.0 mum mask channel lengths at room and liquid nitrogen temperatures. Our results show that the effective channel length increases and the series resistance decreases when the temperature is reduced from 300 to 77K.

    Journal Title

    Electronics Letters

    Volume

    30

    Issue/Number

    8

    Publication Date

    1-1-1994

    Document Type

    Article

    Language

    English

    First Page

    670

    Last Page

    672

    WOS Identifier

    WOS:A1994NL30900040

    ISSN

    0013-5194

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