Title

Series Resistance And Effective Channel-Length Extraction Of N-Channel Mosfet At 77-K

Authors

Authors

A. Ortizconde; J. J. Liou; M. G. Sanchez; M. G. Nunez;R. L. Anderson

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Electron. Lett.

Keywords

MOSFETS; SEMICONDUCTOR DEVICE CHARACTERIZATION; MODEL; Engineering, Electrical & Electronic

Abstract

A simple method is presented to extract the effective channel length and series resistance of n-channel MOSFETs having 0.6-2.0 mum mask channel lengths at room and liquid nitrogen temperatures. Our results show that the effective channel length increases and the series resistance decreases when the temperature is reduced from 300 to 77K.

Journal Title

Electronics Letters

Volume

30

Issue/Number

8

Publication Date

1-1-1994

Document Type

Article

DOI Link

http://dx.doi.org/10.1049/el:19940464

Language

English

First Page

670

Last Page

672

WOS Identifier

WOS:A1994NL30900040

ISSN

0013-5194

Recommended Citation

"Series Resistance And Effective Channel-Length Extraction Of N-Channel Mosfet At 77-K" (1994). Faculty Bibliography 1990s. 2965.
https://stars.library.ucf.edu/facultybib1990/2965