Series Resistance And Effective Channel-Length Extraction Of N-Channel Mosfet At 77-K
Abbreviated Journal Title
MOSFETS; SEMICONDUCTOR DEVICE CHARACTERIZATION; MODEL; Engineering, Electrical & Electronic
A simple method is presented to extract the effective channel length and series resistance of n-channel MOSFETs having 0.6-2.0 mum mask channel lengths at room and liquid nitrogen temperatures. Our results show that the effective channel length increases and the series resistance decreases when the temperature is reduced from 300 to 77K.
"Series Resistance And Effective Channel-Length Extraction Of N-Channel Mosfet At 77-K" (1994). Faculty Bibliography 1990s. 2965.