Title

Algaas Below Half Bandgap - The Silicon Of Nonlinear-Optical Materials

Authors

Authors

G. I. Stegeman; A. Villeneuve; J. Kang; J. S. Aitchison; C. N. Ironside; K. Alhemyari; C. C. Yang; C. H. Lin; H. H. Lin; G. T. Kennedy; R. S. Grant;W. Sibbett

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Keywords

SINGLE-MODE FIBERS; WAVE-GUIDE; 2-PHOTON ABSORPTION; REFRACTIVE-INDEX; SPECTRAL REGION; GAP; POLARIZATION; SEMICONDUCTORS; JUNCTIONS; DEVICES; Optics; Physics, Applied

Abstract

Very few nonlinear optical materials are actually useful for high throughput all-optical devices. However, AlGaAs does satisfy all of the nonlinear optical figures of merit when used with photons of energy less than one half the semiconductor bandgap. Here we review our measurements of the pertinent nonlinear coefficients in waveguides and various device applications to all-optical switching in the communications band around 1550 nm.

Journal Title

International Journal of Nonlinear Optical Physics

Volume

3

Issue/Number

3

Publication Date

1-1-1994

Document Type

Article

DOI Link

http://dx.doi.org/10.1142/s0218199194000213

Language

English

First Page

347

Last Page

371

WOS Identifier

WOS:A1994PU63000004

ISSN

0218-1991

Recommended Citation

"Algaas Below Half Bandgap - The Silicon Of Nonlinear-Optical Materials" (1994). Faculty Bibliography 1990s. 2975.
https://stars.library.ucf.edu/facultybib1990/2975