Authors

X. X. Zhang; P. Hong; G. B. Loutts; J. Lefaucheur; M. Bass;B. H. T. Chai

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

ND-YVO4; Physics, Applied

Abstract

High efficiency, low threshold laser performance of Nd3+ doped Sr5(PO4)3F, or S-FAP, crystals has been demonstrated. Its performance and properties compared with commercially available Nd:YVO4 indicate that Nd:S-FAP is an outstanding medium for diode pumped laser applications at both 1.059 and 1.328 mum.

Journal Title

Applied Physics Letters

Volume

64

Issue/Number

24

Publication Date

1-1-1994

Document Type

Article

Language

English

First Page

3205

Last Page

3207

WOS Identifier

WOS:A1994NQ97900001

ISSN

0003-6951

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