Combined Effects Of Graded And Setback Layers On The Algaas/Gaas Hbt Current-Voltage Characteristics

    Authors

    C. S. Ho; J. J. Liou; D. L. Chen; L. L. Liou;C. I. Huang

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; ABRUPT; RECOMBINATION; TRANSPORT; MODEL; GAAS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The combined effects of graded and setback layers (W-G and W-1) on the AlGaAs/GaAs heterojunction bipolar transistor (HBT) d.c. performance are investigated, and an analytical model which can describe the behavior of such HBTs is presented. The HBT base and collector currents accounting for the variation of the conduction and valence bands due to the presence of W-G and W-1 are also calculated. It is shown that including W-G and W-1 actually degrades the HBT current gain at low current 0 less than or equal to W-G less than or equal to 300 Angstrom or W-1 = 0 and 150 Angstrom less than or equal to W-G less than or equal to 300 Angstrom are used. The model predictions compare favorably with results calculated from a numerical model.

    Journal Title

    Solid-State Electronics

    Volume

    38

    Issue/Number

    3

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    627

    Last Page

    632

    WOS Identifier

    WOS:A1995QK01500014

    ISSN

    0038-1101

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